TOP /
NEWS / 228. B Xu, F Mu, Y Liu, R Guo, S Hu, J Shiomi, „Record-Low thermal boundary resistance at bonded GaN/diamond interface by controlling ultrathin heterogeneous amorphous layer", Acta Materialia 282, 120458 (2025). [https://doi.org/10.1016/j.actamat.2024.120458]
NEWSお知らせ
TOP /
NEWS / 228. B Xu, F Mu, Y Liu, R Guo, S Hu, J Shiomi, „Record-Low thermal boundary resistance at bonded GaN/diamond interface by controlling ultrathin heterogeneous amorphous layer", Acta Materialia 282, 120458 (2025). [https://doi.org/10.1016/j.actamat.2024.120458]
228. B Xu, F Mu, Y Liu, R Guo, S Hu, J Shiomi, „Record-Low thermal boundary resistance at bonded GaN/diamond interface by controlling ultrathin heterogeneous amorphous layer", Acta Materialia 282, 120458 (2025). [https://doi.org/10.1016/j.actamat.2024.120458]2025.04.11 Fri
B Xu, F Mu, Y Liu, R Guo, S Hu, J Shiomi, „Record-Low thermal boundary resistance at bonded GaN/diamond interface by controlling ultrathin heterogeneous amorphous layer", Acta Materialia 282, 120458 (2025). [https://doi.org/10.1016/j.actamat.2024.120458]
